In March 5, 2025, Hangzhou Garen Semiconductor Co., Ltd. (hereafter as ‘Garen’) unveiled the world’s first 8-inch β-Ga₂O₃ single crystal. Using the fully independent and innovative casting method, Garen has successfully grown an 8-inch β-Ga₂O₃ single crystal, and is capable of fabricating corresponding substrates. This breakthrough establishes Garen as the world’s first company to master the growth of 8-inch β-Ga₂O₃ single crystals, breaking the world record for the diameter of β-Ga₂O₃ single crystal and setting a milestone by scaling up crystal diameters from 2-inch to 8-inch within one year per generation increment.

China’s β-Ga₂O₃ industry taking the lead in entering the 8-inch era has profound industrial significance:

First, the 8-inch β-Ga₂O₃ substrate is fully compatible with the existing 8-inch silicon production lines, significantly accelerating the progress of its industrialization.

Second, β-Ga₂O₃ substrate with larger diameter can remarkably improve its utilization with lower production costs and higher efficiency.